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A highly manufacturable self-aligned contact ETOX TM NOR flash memory technology scalable beyond the 40nm node is presented. The technology has been demonstrated on an MLCcapable 256Mb array at the 65nm node with the smallest cell area (0.036 m 2 ) reported to date. Key features include aggressively scaled drain space, symmetric S/D layout for superior lithography and device scaling, novel self-aligned contact integration with excellent spacer reliability, and equivalent CMOS performance to the conventional ETOX TM process flow.

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