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Thin native oxides have been grown on (n)InP in an O2 RF plasma at room temperature and in HNO3 gas at temperatures of 110 and 150 degrees C. Oxide properties have been studied by ellipsometry, high frequency capacitance-voltage and current-voltage measurements on metal-oxide-InP structures. Oxide thicknesses are in the range of 37 to 138 AA with dielectric constant varying from 4.09 to 5.20 and the refractive index from 1.63 to 2.43. C-V curves show clockwise hysteresis and the minimum value of the charge density Dox in the oxide is about 2*1012 cm-2 for chemical oxides. Differences between the properties of plasma oxides and the oxides grown in gaseous nitric acid are analysed.

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