No abstract

Homogeneous transparent conducting Sn:ZnO films on fused silica substrates were prepared by dip-coating from nanoparticle dispersions, while the nanocrystalline Sn:ZnO particles with different dopant concentrations were synthesized by microwave-assisted non-aqueous sol-gel process using Sn(IV) tert-butoxide and Zn(II) acetate as precursors and benzyl alcohol as solvent. The dopant concentration had a great impact on the electrical properties of the films. A minimum resistivity of 20.3 X cm was obtained for a porous Sn:ZnO film with initial Sn concentration of 7.5 mol% after annealing in air and post-annealing in N 2 at 600°C. The resistivity of this porous film could further be reduced to 2.6 and 0.6 X cm after densified in Sn:ZnO and Al:ZnO reaction solution, respectively. The average optical transmittance of a 400-nm-thick Sn:ZnO film densified with Sn:ZnO after the two annealing steps was 91%.