Decreasing the contact angle between In NDs and the Si substrate helps to grow vertically aligned Si NWs with a diameter of 18 nm.

No abstract

An electrostatic-actuated suspended ribbon structure composed of single-crystalline SiC is presented. All the main parts of the structure, namely, a suspended ribbon, posts, base plate, and electrical connections, are made of homoepitaxially grown single-crystalline 4H-SiC with selective ion implantations. Electrical isolation between the ribbon and the base plate is established with a pnp junction. The structure is fabricated by a combination of reactive ion etching (RIE) and doping-selective photoelectrochemical (PEC) etching. The suspended ribbon is actuated by applying a voltage between the ribbon and the base plate.