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Continuous coherent microwave oscillation is observed in InSb p-n junctions under the application of a dc reverse bias voltage in the region of avalanche breakdown and an external high magnetic field at 77 K. The observed oscillation frequency varies with the sample current of the p-n junction and the magnetic field. The oscillation mechanism seems to be different from that of impact-avalanche transit-time (IMPATT) diodes because the external high magnetic field is required to cause the microwave oscillation in the InSb p-n junctions.

Continuous coherent microwave oscillation has been observed in InAs p-n junctions under the application of a dc reverse bias voltage and an external magnetic field in the region of avalanche breakdown at room temperature. The observed oscillation frequency varies with the sample current of the p-n junction and the magnetic field.

A new type of voltage-controlled negative resistance is observed in very thin samples of n-InSb in a high electric field in the region of avalanche breakdown (E≳600 V/cm) and a transverse high magnetic field (B≳1 kG) at 77 K. The negative resistance is observed only in thin samples whose thickness is less than about 30 μm regardless of the length. The mechanism of negative resistance seems to be different from proposed effects such as trapping of hot electrons, Gunn effect, and the acoustoelectric domain effect.