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Ruthenium doped indium oxide (In 1−x Ru x O y) films fabricated using DC magnetron co-sputtering with In 2 O 3 and Ru targets were investigated for use as transparent conductive oxides. The In 1−x Ru x O y films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In 1−x Ru x O y films increased as the Ru content increased. The transmittance of the In 0.38 Ru 0.62 O y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10 −4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In 0.9 Sn 0.1 O y , ITO) (150 nm)/ultrathin In 0.38 Ru 0.62 O y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10 −5 Ω cm. This ITO/In 0.38 Ru 0.62 O y bilayer is a candidate for use as an anode for organic electroluminescent devices.

The addition of Ni to Mn-Co films was prepared by electroplating process. Film behavior under corrosive environment was investigated by oxidation techniques. The samples were kept under stagnant air at 800 °C in heat treatment furnace at operating temperature of SOFC for 100 hours. The surface morphology and films compositions were then examined. Mn-Co films with nickel amount of 18.8 wt.-% exhibited the best oxidation resistance. Ni-doped Mn-Co films show high antioxidation behavior because of high film density and crack-free film. The film is composed of many small particles with close packing, and the average particle size is about 1 μm. Film thickness is around 11 μm with surface roughness of 82.97 nm and it has good coherence with substrates. Optimization of nickel amount also plays an important role in antioxidation performance.

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