This paper reports the characteristics of vertical GaN-based trench metal-oxide-semiconductor field-effect transistors on a free-standing GaN substrate with a blocking voltage of 1.6 kV. The high blocking voltage was obtained by using field plate edge termination around the isolation mesa of the transistor. To our knowledge, the blocking voltage is the highest ever reported for vertical GaN-based transistors on free-standing GaN substrates. Normally off operation with a threshold voltage of 7 V is also demonstrated.

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Phosphatidylserine (

This paper reports on vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottky electrode. The fabricated SBDs with 3 × 3 mm2 Schottky electrodes exhibited both a forward current of 50 A and a blocking voltage of 790 V. To our knowledge, the characteristics of operation with a simultaneous high forward current and high blocking voltage are reported for the first time for vertical GaN SBDs on free-standing GaN substrates. The dependence of these characteristics on the Schottky electrode size is also reported in detail.

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