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We have developed a metal-oxide-nitride-oxide-semiconductor (MONOS) memory device with one-side halo implantation, in which programming and erasing are performed by channel-hot-electron injection and hot-hole injection, respectively. This MONOS memory has a simple structure and is fabricated through the conventional complementary metal-oxidesemiconductor (CMOS) process before the specific process for the memory device. A threshold voltage shift of more than 3.0 V, obtained through a programming operation, results in a threshold voltage greater than the programming gate voltage and is sufficient to enable the 10-year lifetime of this device.

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