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Time resolved emission (TRE) microscopy can detect photons, and its signal-to-noise (S/N) ratio is higher than that of Photo Emission Microscopy under weak emission conditions. This is the first study to show the TRE observation in avalanche breakdown through thick source metal from the top surface of power MOSFET. TRE is an effective method to detect several photons, however, the strong emission range saturate the output of TRE detectors and this phenomenon disturbs accurate photon measurement. Our study results show that the photon count behavior is consistent with the oscillation of avalanche current. Also, the distribution of photon count density in the regions of the device is different, which indicates that there is distribution of current density in MOSFET. The described approach has the capacity to observe the current density distribution without any power device electrode metal removal and can be applied to measure the oscillation behavior of avalanche current.

Mask inspection has become a much more important factor in LSI manufacturing. In order to perform mask inspection with high reliability for devices of 100-130 nm rule and below, a highresolution and high-speed die-to-database inspection system is indispensable. In order to satisfy these requirements, the Toshiba MC-3500, a next-generation mask inspection system using 257nm DUV short wavelength optics, has been developed. The MC-3500 employs a die-to-database comparison method and a high-performance data processing system that is newly developed. This paper reports the system configuration, basic characteristics for defect detection and inspection performance.