The present paper describes a three-dimensional (3D) thick-photoresist microstructuring technique that exploits the effect of exposure wavelength on dissolution rate distributions in a thick-film diazonaphthoquinone (DNQ) photoresist. In fabricating 3D microstructure with specific applications, it is important to control the spatial dissolution rate distribution in the photoresist layer, since the lithographic performance for 3D microstructuring is largely determined by the details of the dissolution property. To achieve this goal, the effect of exposure wavelength on dissolution rate distributions was applied for 3D microstructuring. The parametric experimental results demonstrated (1) the advantages of the fabrication technique for 3D microstructuring and (2) the necessity of a dedicated simulation approach based on the measured thick-photoresist property for further verification. Thus, a simple and practical photolithography simulation model that makes use of the Fresnel diffraction theory and an empirically characterized DNQ photoresist property was adopted. Simulations revealed good quantitative agreement between the photoresist development profiles of the standard photolithography and the moving-mask UV lithography process. The simulation and experimental results conclude that the g-line (λ = 436 nm) process can reduce the dimensional limitation or complexity of the photolithography process for the 3D microstructuring which leads to nanoscale microstructuring.

We have measured cantilever resonance frequency versus sample bias voltage and generated frequency vs bias ( f–V) curves using an ultrahigh-vacuum noncontact atomic force microscope (UHV NC-AFM). Using the f–V data, we calculated the contact potential difference (CPD) between the tip and the sample. These CPD measurements were compared with those that were directly observed with a scanning Kelvin probe force microscope (SKPM) on the same atomically resolved area of the sample using a UHV-AFM. The CPD values obtained by both methods were similar, however, it was difficult to obtain CPD values that agreed precisely on the atomic scale.

The family name of the last author should read Masahiro Miyao