Understanding the electrical contact properties of carbon nanotube (CNT) ends is important to use the high conductance of CNTs in the CNT on-axis direction in applications such as through-silicon via structures. In this study, we experimentally evaluated the contact resistivity between single-/multi-walled CNT ends and a metal nanoprobe using conductive atomic force microscopy (C-AFM). To validate the measured end contact resistivity, we compared our experimentally determined value with that obtained from numerical calculations and reported values for side contact resistivity. The contact resistivity normalized by the length of the CNT ends was 0.6–2.4 × 106 Ω nm for single-walled CNTs. This range is 1–2 orders of magnitude higher than that determined theoretically. The contact resistivity of a single-walled CNT end with metal normalized by the contact area was 2–3 orders of magnitude lower than that reported for the resistivity of a CNT sidewall/metal contact. For multi-walled CNTs, the measured contact resistivity was one order of magnitude higher than that of a CNT forest grown by remote plasma-enhanced chemical vapor deposition, whereas the contact resistivity of a top metal electrode was similar to that obtained for a single-walled CNT forest.

For sp2 or sp3 carbon material growth, it is important to investigate the precursors or intermediates just before growth. In this study, the density of ethylene (C2H4) outside the plasma discharge space and just before reaching the carbon nanotube (CNT) growth region is investigated by vacuum ultraviolet absorption spectroscopy for plasma discharge in an antenna‐type remote plasma chemical vapor deposition with a CH4/H2 system, with which the growth of very long (≈0.5 cm) CNT forests is achieved. Single‐wall CNT forests have the potential for application as electrodes in battery cells, vertical wiring for high current applications, and thermal interface materials. It is observed that the plasma discharge decomposes the CH4 source gas and forms C2Hx species, which reversibly reform to C2H4 in the plasma‐off state. In addition, the density of the formed C2H4 has a strong correlation to the CNT growth rate. Therefore, the C2H4 density is a good indicator of the density of C2Hx species for CNT growth in the CH4/H2 plasma system.

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.