Determination of deeplevel parameters by a new analysis method of isothermal capacitance transients J. Appl. Phys. 69, 3072 (1991); 10.1063/1.348569 Refinements in the method of moments for analysis of multiexponential capacitance transients in deep level transient spectroscopy Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (.eV) AEl=O.264+0.01, AE2=0.580t0.017, and AE3 =0.665+0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and. group theory results in the literature.304

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