In this paper, post superacid (SA) treatment was for the first time proposed to enhance the performance of InAs FinFETs on SiO2/Si substrate. Typically, the subthreshold swing (SS) has reduced from 217 mV/dec to 170 mV/dec and transconductance (gm) has increased from 6.44 μS/μm to 26.5 μS/μm after SA treatment, respectively. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to strong protonating nature of SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates the carrier mobility is enhanced by 5.8~7.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

No abstract

No abstract

No abstract

No abstract