As the diamond surface has higher interface energy, the adhesion of surface and matrix is bad, and it makes the diamond shatter easily. For solving this, the microstructures and properties of the metallic coating on the diamond surface which contains W (tungsten) by hydrothermal method are studied. The different temperatures such as 110 ~140°C and 5h insulating were adopted to be coated in high pressure reactor respectively. The metallic coating on the diamond surface was studied by SEM，XRD and so on. The results show that the continuous and compact coating of Ni and W on the diamond surface is formed by the hydrothermal coating technology at 130°C. The heat treatment temperatures were maintained at 850°C for 1h during the heat treatment process. After the corresponding heat treatment, the better layer coatings, of which thickness is about 10μm, are formed for protecting diamonds and reducing the trend of oxidization. The carbide WC (tungsten carbide) at the interface between the coating and diamond surface is formed. The chemical and metallurgical bonding between diamond and coating is obtained. Because of the coating layers formed and the defects on diamond surface made up, the compress strength of diamond after hydrothermal and heat treatment is enhanced. The compressive strength after hydrothermal and heat treatment is higher than that of un-coating particles(those are 29.45% and 83.64% respectively).

For researching the thermoelectric properties, bulk NiSb2 and the composite of CoSb3 and NiSb2 were prepared by sintering. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, Bulk NiSb2 and the composite of NiSb2:CoSb3=2:8 and 4:6 were prepared by sintering at 600°C for 10min and they are N-type semiconductor materials with high densities of 6.998~7.142g/cm3. The bulk NiSb2 sample sintered is nearly single phase NiSb2, while the major phases of the composite of NiSb2:CoSb3=2:8 are major phase CoSb3 with impurity phase NiSb2. The electric resistivity of bulk NiSb2 sample increases with temperature rising while those of the composites (NiSb2:CoSb3=2:8 and 4:6) increase at 400~500 °C. The absolute values of Seebeck coefficients of the composite samples (NiSb2:CoSb3=2:8 and 4:6) increase with temperature rising and are evidently higher than those of bulk NiSb2. The power factors of the composites (NiSb2:CoSb3=2:8 and 4:6) are evidently higher than those of bulk NiSb2 while the power factor of NiSb2 sample varies not obviously with temperature rising, but those of the composites (NiSb2:CoSb3=2:8 and 4:6) increase with temperature rising and reaches the maximum value of 21.3 10-4Wk-2m-1 at 500 °C.

For investigating the thermoelectric properties, bulk FeSb2and the composite of CoSb3:FeSb2=7:3 was prepared via sintering. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, bulk FeSb2and the composite of CoSb3:FeSb2=7:3 are P-type semiconductor materials. The electric resistivity of bulk FeSb2sample increases with temperature rising while that of the composite (CoSb3:FeSb2=7:3) decreases with temperature rising. The Seebeck coefficient of the composite (CoSb3:FeSb2=7:3) is evidently higher than that of bulk FeSb2. The thermal conductivities of the composite (CoSb3:FeSb2=7:3) are relatively lower than those of bulk FeSb2. TheZTvalues of bulk FeSb2sample are lower than those of the composite (CoSb3:FeSb2=7:3), that of the later increases with temperature rising at 100~500°C, the maximum value is up to 0.1647.

Thin film solar cell is the best alternative to replace Si solar cell, which has the advantages of low cost, no pollution and so on. It has been developing rapidly in recent years. CuInTe2 thin-film battery which is similar to CIS thin-film battery belongs to Cu-AⅢ-BVI2 sulfur compounds. The energy gap of CuInTe2 are about 1.06eV, and it is a kind of good absorbing layer material. In this paper, the research history of the CuInTe2 thin film materials is briefly introduced. It only stays at the stage of preparation and performance testing, and has not been prepared for the finished battery at present. The feasibility and advantages of CuInTe2 as photoelectric material are explained from it’s structure characteristics. The advantages and disadvantages of various methods of preparing thin film materials are analyzed and impurities in the process are found in the progress. The optical properties and electrical properties of the CuInTe2 thin-film cells can be tested without the preparation of a battery due to the complexity of thin film solar cell structure.

Ni-Se powders synthesized by hydrothermal co-reduction method from NiCl2.6H2O and SeO2 at 95～220 °C. The phases and morphology of the products were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM) respectively. Experimental results show that, Ni0.85Se can be synthesized at 95～220 °C while noticeable impurities appeared at lower reaction temperatures. The products with single-phase Ni0.85Se obtained at 200 and 220 °C show hollow sphere structures with diameters of about 150 ~ 700 nm, which have complete and regular shape but no holes.