An efficient multichannel Thomson scattering measurement system for measuring the electron energy distribution function in low-temperature processing plasmas was constructed. It consists of a specially designed triple-grating spectrometer, equipped with a spatial filter for eliminating the interference due to Rayleigh scattering, and an image-intensified charge-coupled-device (ICCD) camera working in the photon counting mode. The spectrometer produces a dispersed Thomson spectrum with the Rayleigh interference highly suppressed, thereby enabling us to operate the ICCD camera in the photon-counting mode giving a high signal-to-noise ratio; the measured Rayleigh light suppression ratio was ∼10−6 at the center wavelength. Proper operation of the system was demonstrated in the measurements for a low-pressure (20–100 mTorr) inductively coupled Ar plasma.

Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor‐acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites (SnZn) to Zn vacancy (VZn) levels, is observed in the crystals grown by the SG method. The PL spectra of the crystals grown by the NF method exhibit free‐to‐bound transitions. Ionization energies of the SnZn and VZn levels are estimated to be approximately 110 and 40–50 meV, respectively. These results are the first step toward realizing novel functions of optical devices using ZnSnP2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The photoluminescence (PL) spectra of the bulk ZnSnP 2 crystals grown by the solution growth (SG) and normal freezing (NF) methods are studied. The donor-acceptor pair transition, which possibly originates from the transition from the levels of Sn at Zn sites (Sn Zn ) to the Zn vacancy (V Zn ) levels, is observed using the crystals grown by SG method. The ionization energies of the Sn Zn and V Zn levels are estimated to be approximately 110 and 40 -50 meV, respectively. The PL spectra of the crystals grown by SG method exhibits free-to-bound transition. These results are the first step toward realizing the novel function or optical devices as a solar cell using ZnSnP 2 .

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