By both numerical simulation and experimental investigation, we found it possible to enlarge the grain size (∼3000 Å) of polycrystalline silicon (poly-Si) films by excimer laser annealing, using a new method to control the solidification process of molten Si - low-temperature (≦400°C) substrate heating during laser annealing. Poly-Si thin-film transistors (TFTs) fabricated by this new excimer laser annealing method showed a high field-effect mobility of 230 cm2/V·s, and good uniformity of field-effect mobility (±10%) within the effective laser irradiation area.

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It is shown that Pad6 approximants can be obtained directly from the Fredholm expansion for scattering phase shifts. The accuracies of various Pad6 and Fredholm approximants taken up to the third order in the strength of the interaction potential are assessed by evaluating the S-wave phase shifts for the elastic scattering of particles by square-well and exponential potentials. The second-order Pad6 and Fredholm approximants are found to be quite accurate and both superior to the second Born approximation, while taken t o third order they generally yield very accurate yalues for the phase shifts.

Sensing ambient light in mobile applications allows reduced power consumption through backlight control. Integration of light sensors reduces module complexity and location of the sensors close to the pixel array simplifies integration in products.We describe an integrated ambient light sensor consisting of lateral pin diodes and digital read out circuit.

We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.