The efficiency of 17.8% on a 30 × 30cm 2 -sized Cu(In,Ga)(Se,S) 2 (CIS)-based thin-film submodule was achieved. The device structure is same as our previous works; monolithically integrated CIS-based cells on a Modeposited glass substrate with a Zn(O, S, OH) x buffer and a ZnO window. Current Progress was mainly brought by review of the band profile of the absorber layer. More specifically, fine tuning of the grading of Ga/(Ga+In) and S/(Se+S) ratio turned out to improve the value of V oc × J sc by a factor of as much as three percent.

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A new ultralow voltage 2.4 GHz voltage-controlled oscillator (VCO) and a divide-by-2 frequency divider circuits operating in a CMOS sub-threshold region using a transformer technique have been developed. In the sub-threshold region, the CMOS transistor high frequency performances are decreased to the point where oscillation and frequency division are challenging to achieve. The new proposed VCO uses the transformer feedback complementary VCO technique to improves VCO negative feedback gain. The circuits have been fabricated in a 65 nm standard CMOS process. The oscillation frequency is designed at 2.4 GHz under a 300 mV supply voltage. The total power consumption is 202 µW with noise performance of −96 dBc/Hz at 1 MHz offset. The new proposed frequency divider circuit consists of two stages master-slave D-type flip-flop (DFF). The DFF differential input is coupled to a transformer circuit instead of transistors to reduce the number of stacks. The minimum operating supply voltage is 300 mV with power consumption of 34 µW with a free-run frequency of 1.085 GHz.

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