High quality SiO 2 gate insulators are one of the key technologies for improving performance of Low Temperature Poly Silicon TFTs. We have developed an ALD/PECVD reactor, which handles 370 mm 470 mm glass substrates. The reactor has a unique plasma source of the monopole antenna, which is the electromagnetic wave coupled type and operates at VHF range. A PE-ALD SiO 2 film was deposited at 200 with alternating exposures of aminosilane and radical oxygen generated by the plasma. Growth rate of the film and thickness variation were 0.1 nm cycle -1 and less than 5 %, respectively. Conformal film growth was observed on patterned substrates. Uniform current-voltage performance was confirmed on the glass and its electrical field was higher than 8.0 MVcm -1 at a leakage current of 1×10 -6 Acm -2 . The film had an excellent Si / SiO 2 interface trap density of lower than 1×10 11 cm -2 eV -1 after forming gas annealing.

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