We selectively create p-wave Feshbach molecules in the m l = ±1 orbital angular momentum projection state of 6 Li. We use an optical lattice potential to restrict the relative momentum of the atoms such that only the m l = ±1 molecular state couples to the atoms at the Feshbach resonance. We observe the hollow-centered dissociation profile, which is a clear indication of the selective creation of p-wave molecules in the m l = ±1 states. We also measure the dissociation energy of the p-wave molecules created in the optical lattice and develop a theoretical formulation to explain the dissociation energy as a function of the magnetic field ramp rate for dissociation. The capability of selecting one of the two closely-residing p-wave Feshbach resonances is useful for the precise characterization of the p-wave Feshbach resonances.

We experimentally confirmed the threshold behavior and scattering length scaling law of the three-body loss coefficients in an ultracold spin-polarized gas of ^{6}Li atoms near a p-wave Feshbach resonance. We measured the three-body loss coefficients as functions of temperature and scattering volume, and we found that the threshold law and the scattering length scaling law hold in limited temperature and magnetic field regions. We also found that the breakdown of the scaling laws is due to the emergence of the effective-range term. This work is an important first step towards a full understanding of the loss of identical fermions with p-wave interactions.

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We have investigated the dielectric properties of the Cr2O3 films using ferromagnetic electrode; (La0.66, Sr0.33)MnO3. The relationships between those properties and their crystallinity also have been investigated. The well crystallized sample was exhibited low leakage current density. Although all samples show capacitance decreasing by applying voltages, the decreasing ratio was the largest on the sample with lowest leakage current density. Since the Cr2O3 film with same leakage current density as that sample using non-magnetic electrode didn't show any capacitance changes by applying voltages, it is suggested that the dielectric properties of Cr2O3 film might be affected by the ferromagnetic film.

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