Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.

Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling.