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415The cross secion fer r:uclccr:-r:uclrcn ccllistens in tbe nuclear matter is calculated in an aralytical way on the basts cf the Fermi gas mcdel ar:d the inverse ocergy nuckcn smttcnrg cross sectton. The mean free path thus denved 1s found to l:e m

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507The generation of 12C, 16() and 20Ne by successive a-capturing proc•sses in the helium core of stars is calculated under the condition at temperature-10°°K. The rat

A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X band applications. The device consists of 2-dice of 14.4-mm gate periphery together with input and output 2-stage impedance transformers. The device exhibited saturated output power of 310 W with power gain of 10.0 dB over the wide frequency range of 8.5-10.0 GHz, operating at 65 V drain voltage under pulsed condition. In addition, the highest saturated output power reached 333 W with power gain of 10.2 dB at 9.0 GHz. This is the highest output power GaN HEMT ever reported for X-band.