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The band-gap energy (Eg) of metalorganic vapor phase epitaxially (MOVPE) grown Ga0.5In0.5P lattice matched to (001) GaAs is presented as a function of a wide range of V/III ratios and growth temperatures. Photoluminescence, Raman scattering spectroscopy, transmission electron microscopy, and impurity diffusion were used to investigate this functional relationship. Two pieces of evidence are shown which demonstrate that MOVPE Ga0.5In0.5P epitaxial layers with ‘‘abnormal’’ Eg∼1.85 eV and ‘‘normal’’ Eg∼1.9 eV correspond to an ordered and a random (Ga,In) distribution on column III sublattices, respectively. In an ordered state, a sequence of (110) planes...GaGaInInGaGaInIn...in the [110] direction is the most probable distribution.

We have performed a high-resolution angle resolved Ce 4d-4f resonant photoemission experiment on the heavy fermion superconductor CeIrIn 5 . We have observed a quasi-particle band which has an energy dispersion of 30 meV in the Ce 4f on-resonance spectra. The result suggests that although the 4f spectra are dominated by the localized/correlated character, the small itinerant component is responsible for the superconductivity in this compound. 71.27.+a, 71.18.+y I.