In the presence of a catalytic amount of Cp*RuCl(cod), 1,6-diynes chemoselectively reacted with monoalkynes at ambient temperature to afford the desired bicyclic benzene derivatives in good yields. A wide variety of diynes and monoynes containing functional groups such as ester, ketone, nitrile, amine, alcohol, sulfide, etc. can be used for the present ruthenium catalysis. The most significant advantage of this protocol is that the cycloaddition of unsymmetrical 1,6-diynes with one internal alkyne moiety regioselectively gave rise to meta-substituted products with excellent regioselectivity. Completely intramolecular alkyne cyclotrimerization was also accomplished using triyne substrates to obtain tricyclic aromatic compounds fused with 5-7-membered rings. A ruthenabicycle complex relevant to these cyclotrimerizations was synthesized from Cp*RuCl(cod) and a 1,6-diyne possessing phenyl terminal groups, and its structure was unambiguously determined by X-ray analysis. The intermediary of such a ruthenacycle intermediate was further confirmed by its reaction with acetylene, giving rise to the expected cycloadduct. The density functional study on the cyclotrimerization mechanism elucidated that the cyclotrimerization proceeds via oxidative cyclization, producing a ruthenacycle intermediate and subsequent alkyne insertion initiated by the formal [2 + 2] cycloaddition of the resultant ruthenacycle with an alkyne.

Chiral and C2-symmetrical 2,6-bis(4'-R-oxazolin-2'-yl)pyridines (pybox, la-e, R = t-Pr, sec-Bu, f-Bu, Et, and Ph) have been newly designed and synthesized from the corresponding optically active d-amino alcohols and pyridine-2,6-dicarboxylic acid as auxiliaries for metal-catalyzed reactions. We have found that the trivalent rhodium-pybox complexes 2a-e can act as catalysts for asymmetric reduction of ketones

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A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current–gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors.

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