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Sesamin extends the lifespan of C. elegans through several dietary restriction-related signaling pathways, including processes requiring SIRT1, TOR, and AMPK.

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The concept and the current status of a newly developed PEM pattern inspection system are presented. An image-processing technique with learning functions to enhance the system's detection capability is investigated. Highly accelerated electrons employed here in electron-optics function as an enabler to improve the image resolution and transmittance in the system, and to acquire an image contrast of 0.5 in a half pitch (hp) 64 nm lines and space pattern. This process also results in the formation of an electron image with more than 3000 electrons per pixel on a sensor. The image-processing system was also developed for die-to-die inspection. The alignment error is minimized to a negligibly small size by a continuous 2D pattern matching. An ensemble of signal characteristics enables the identification of any defect signal in a noisy electron image. The developed detection system met the requirements for hp16 nm generation.

We are developing new electron beam inspection system, named EBeyeM, which features high speed and high resolution inspection for EUV mask. Because EBeyeM has the projection electron microscope technique, the scan time of EBeyeM is much faster than that of conventional SEM inspection system.We developed prototype of EBeyeM. The aim of prototype system is to prove the concept of EBeyeM and to estimate the specification of system for 2Xnm and 1Xnm EUV mask.In this paper, we describe outline of EBeyeM and performance results of the prototype system. This system has two inspection mode. One is particle inspection and the other is pattern defect inspection. As to the sensitivity of EBeyeM prototype system, the development target is 30nm for the particle inspection mode and 50nm for pattern defect inspection mode. The performance of this system was evaluated. We confirmed the particle inspection mode of the prototype system could detect 30nm PSL(Polystyrene Latex) and the sensitivity was much higher than conventional optical blank inspection system. And we confirmed that the pattern defect sensitivity of the prototype system was around 45nm. It was recognized that both particle inspection mode and pattern defect inspection mode met the development target. It was estimated by the performance results of the prototype system that the specification of EBeyeM would be able to achieve for 2Xnm EUV mask. As to 1Xnm EUV mask, we are considering tool concept to meet the specification.