The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination, and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the low transport mobility of CVD-G did not arise from point defects or surface contaminations, but stemmed from line defects induced by grain boundaries. Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. The effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model. Furthermore, the conduction mechanism of CVD-G was also investigated using the temperature dependence measurements. This study can help understand the intrinsic transport features of CVD-G.

Selective graphene growth on copper twin crystals by chemical vapor deposition has been achieved. Graphene ribbons can be formed only on narrow twin crystal regions with a (001) or high-index surface sandwiched between Cu crystals having (111) surfaces by tuning the growth conditions, especially by controlling the partial pressure of CH(4) in Ar/H(2) carrier gas. At a relatively low CH(4) pressure, graphene nucleation at steps on Cu (111) surfaces is suppressed, and graphene is preferentially nucleated and formed on twin crystal regions. Graphene ribbons as narrow as ~100 nm have been obtained in experiments. The preferential graphene nucleation and formation seem to be caused primarily by a difference in surface-dependent adsorption energies of reactants, which has been estimated by first principles calculations. Concentrations of reactants on a Cu surface have also been analyzed by solving a diffusion equation that qualitatively explains our experimental observations of the preferential graphene nucleation. Our findings may lead to self-organizing formation of graphene nanoribbons without reliance on top-down approaches in the future.

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of approximately 9 eV. Great potential of this new epitaxial layer for device applications is described.

We investigated the initial stage of chemical vapor deposition graphene growth on Cu film at low pressure, where Cu evaporation intensively occurs. Surface steps on the Cu surface were found to be the nucleation sites of graphene islands and to affect the subsequent growth. For the first time, we observed anisotropic graphene growth on the Cu surface accompanied by morphological changes, resulting in an arrayed graphene ribbon formation. The resultant surface morphology is attributed to step bunching during growth. Detailed analyses suggest that the graphene arrays, which were preferentially formed along the steps, served as partial shields of the Cu surface, preventing step-flow-like Cu atom diffusion and evaporation at the growth site. As a result, the growth locations acted as a pinning site of the step motion, leading to step bunching. Such selective growth by using surface morphology has the potential to control not only the nucleation site but also the geometry of graphene for tailoring graphene-based nanomaterials such as nanoribbons and quantum dots.

A two-dimensional (2D) layered SnS 2 film synthesized by the thermal-chemical vapor deposition method is utilized for detecting formaldehyde (HCHO), which causes a sick building syndrome. A back-gated field-effect transistor (FET)-based SnS 2 sensor successfully detects HCHO with concentrations down to 1 ppb in a nitrogen atmosphere. Sensing measurements performed under dry air conditions also exhibit a clear response to 20 ppb of HCHO, which is more sensitive than the previously reported sensors based on other 2D-layered materials. Moreover, it is found that the sensor possesses a high selectivity for HCHO over other organic species. Theoretical calculations suggest that native sulfur vacancies existing in n-type SnS 2 crystals play an important role in HCHO detection. Actually, oxygen atoms that are unexpectedly detached from HCHO molecules are found to fill the vacancies, giving rise to p-type doping in SnS 2 . As a result, decrease in the drain current of SnS 2 -FET can be found as a signal of HCHO detection. Furthermore, considering the future mass-production of sensors, we demonstrate large-scale growth of the SnS 2 film by means of magnetron-sputtering deposition and subsequent annealing in a diluted hydrogen sulfide atmosphere. The sputtered film is also found to exhibit a good sensing ability to HCHO.