The direct band energy (Eg) and donor–acceptor (D,A) transition energies are mapped as a function of temperature for Be-doped GaAsSb lattice matched to InP. Photoluminescence (PL) measurements over the temperature range 2 K≤T≤300 K yield two emission peaks, one of lower intensity and one of higher intensity. The lower intensity peak is believed to be Be related, while the higher intensity peak is from residual impurities. The emission energies of both PL peaks increase linearly with respect to the logarithm of excitation intensity, indicating the peaks are (D,A) transitions. Measurement of Eg was achieved using optical absorption spectroscopy over the range 14 K≤T≤300 K. A least squares fit of the absorption data using the Varshni equation produces a closed form expression for Eg(T) with coefficients α=13.5×10−4 eV/K, and β=135 K.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.