Neuromorphic networks of artificial neurons and synapses can solve computationally hard problems with energy efficiencies unattainable for von Neumann architectures. For image processing, silicon neuromorphic processors outperform graphic processing units in energy efficiency by a large margin, but deliver much lower chip-scale throughput. The performance-efficiency dilemma for silicon processors may not be overcome by Moore’s law scaling of silicon transistors. Scalable and biomimetic active memristor neurons and passive memristor synapses form a self-sufficient basis for a transistorless neural network. However, previous demonstrations of memristor neurons only showed simple integrate-and-fire behaviors and did not reveal the rich dynamics and computational complexity of biological neurons. Here we report that neurons built with nanoscale vanadium dioxide active memristors possess all three classes of excitability and most of the known biological neuronal dynamics, and are intrinsically stochastic. With the favorable size and power scaling, there is a path toward an all-memristor neuromorphic cortical computer.

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In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm—wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.