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Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi4Si3O12 (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi3+ ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd3+ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.

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We prepared 25Li 2 O-10MgO-65SiO 2 glasses doped with various concentrations of Ce by the melt-quenching method and systematically evaluated their photoluminescence (PL) and dosimetric properties. X-ray diffraction patterns showed that the prepared samples were in an amorphous state. The PL spectra and decay curves of the Ce-doped glasses confirmed the PL emission peak due to the 5d-4f transitions of Ce 3+ ions. The PL quantum yields of the 0.3, 1, 3, 5, and 10% Ce-doped glasses were 17.5, 31.0, 36.6, 27.2, and 26.3%, respectively. Regarding dosimetric properties, the Ce-doped glasses showed thermally stimulated luminescence (TSL) at 100, 300, and 400 °C. Moreover, the 1, 3, 5, and 10% Ce-doped glasses showed the TSL dose response from 10 mGy to 10 Gy with a proportional relationship.