No abstract

We demonstrated the negative differential resistance (NDR) characteristics in CaF 2 /Si double barrier resonant tunneling diodes (DBRTDs) which have mesa structure isolated by the plasma etching process using CF 4 /O 2 plasma. Clear NDR characteristics with a peak to valley current ratio of 79 and a current density of 1-10 kA cm −2 was obtained from a CaF 2 /Si DBRTD mesa-isolated using CF 4 /O 2 plasma etching at room temperature. Furthermore, any degradation of performance of the DBRTD caused by dry etching has not been observed. The NDR characteristics were reasonably reproduced by theoretical analysis based on a ballistic transport model. These results implied that the plasma etching process using CF 4 /O 2 enables CaF 2 /Si heterostructure devices to be implemented into the Si-based integrated circuit technology.

No abstract

No abstract