Here we report successful demonstration of a FET-like electrochemical nano-biosensor to accurately detect ultralow concentrations of adenosine triphosphate. As a 2D material, graphene is a promising candidate due to its large surface area, biocompatibility, and demonstrated surface binding chemistries and has been employed as the conducting channel. A short 20-base DNA aptamer is used as the sensing element to ensure that the interaction between the analyte and the aptamer occurs within the Debye length of the electrolyte (PBS). Significant increase in the drain current with progressive addition of ATP is observed whereas for control experiments, no distinct change in the drain current occurs. The sensor is found to be highly sensitive in the nanomolar (nM) to micromolar ( μM) range with a high sensitivity of 2.55 μA (mM) (-1), a detection limit as low as 10 pM, and it has potential application in medical and biological settings to detect low traces of ATP. This simplistic design strategy can be further extended to efficiently detect a broad range of other target analytes.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 Â 10 19 cm À3 for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurements confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism. V

We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (InO) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on InO nanostructure based device characteristics for potential optoelectronic applications. InO nanowires with cubic crystal structure (c-InO) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy [Formula: see text] defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of [Formula: see text] defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

It is a well-known fact that ZnO has been one of the most studied wide bandgap II-VI materials by the scientific community specifically due to its potential for being used as exciton-related optical devices. Hence, realizing ways to increase the efficiency of these devices is important. We discuss a plasma treatment technique to enhance the near-band-edge (NBE) excitonic emission from ZnO based nanoribbons. We observed an enhancement of the NBE peak and simultaneous quenching of the visible emission peak resulting from the removal of surface traps on these ZnO nanoribbons. More importantly, we report here the associated ultrafast carrier dynamics resulting from this surface treatment. Femtosecond transient absorption spectroscopy was performed using pump-probe differential transmission measurements shedding new light on these improved dynamics with faster relaxation times. The knowledge obtained is important for improving the application of ZnO based optoelectronic devices. We also observed how these improved carrier dynamics have a direct effect on the threshold and efficiency of random lasing from the material.

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