We attempted to reduce c axis-oriented grains of BLT thin films (Bi 3.25 La 0.75 Ti 3 O 12 ) by controlling 2-step RTA annealing conditions. BLT thin films (Bi 3.25 La 0.75 Ti 3 O 12 ) were prepared using sol-gel method. 2-step RTA annealing was employed to restrain the growth of c axis-oriented grains in randomly oriented BLT films. Microstructural variations of BLT thin films were investigated by monitoring XRD and AFM. The ferroelectric properties such as hysteresis loop, switching behavior, and leakage current were examined in terms of RTA process conditions. The result revealed that as the portion of (117) oriented grain increases, the ferroelectric properties except the leakage current property improved. From the study, we can optimize RTA process to yield better ferroelectric properties of BLT thin films (Bi 3.25 La 0.75 Ti 3 O 12 ).