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A contact-free optical technique is developed to enable a spatially resolved measurement of minority carrier diffusion length and the associated mobility-lifetime (μτ ) product in bulk semiconductor materials. A scanning electron microscope is used in combination with an internal optical microscope and imaging charge-coupled device (CCD) to image the bulk luminescence from minority carrier recombination associated with one-dimensional excess carrier generation. Using a Green's function to model steady-state minority carrier diffusion in a three-dimensional half space, non-linear least squares analysis is then applied to extract values of carrier diffusion length and surface recombination velocity. The approach enables measurement of spatial variations in the μτ product with a high degree of spatial resolution. [http://dx

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