Electrochemical reduction is used to synthesize indium-gallium-hydroxide-nitrate nanoclusters which are shown to be promising precursors for thin-film transistors.

The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al 2 O 3-3x (PO 4 ) 2x or -AlPO‖) thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al 2 O 1.5 (PO 4 ) to AlPO 4 (x = P:Al from 0.5-1.0). Film thicknesses were determined using X-ray reflectivity measurements and were found to depend systematically on solution concentration, P:Al ratio, and spin-speed.Metal-insulator-semiconductor devices were fabricated to determine electrical properties as a function of composition. As the P:Al ratio increased from 0.5 to 1.0, the dielectric constant decreased from 6.0 to 4.6, leakage currents increased from 0.45 to 65 nA cm -2 at 1MV cm -1 and dielectric breakdown (defined as leakage currents >10 µA cm -2 ) decreased from 9.74 to 2.84 MV cm -1 . These results establish composition, concentration, and spin-speed for the production of AlPO films with targeted thicknesses and electrical properties.

Methods for catalytic activation followed by electroless metal plating have been developed for their potential use for 2.5D and 3D Through -Si Vias (TSVs) packaging applications. SiO x and TiO x nanolayers with catalytic Pd particles have been deposited that are low in thickness (< 30nm) and roughness (< 2nm). Metal (Ni or Co) has been electrolessly plated with P and W to ensure low roughness and aid in limiting inter-diffusion between the metal barrier-seed layer and electroplated copper. Electroless Co or Ni films containing over 12% P and 2% W provided an effective barrier layer. These methods could be also applied to Through -Glass Vias (TGVs) substrates.

Integration of electronic components and internet connectivity into devices is becoming commonplace. Flexible circuitry allows for integration without significantly altering the dimensions of these devices. Here we demonstrate the combined use of UV-laser exposure activation of a photopatternable catalytic resist deposited onto flexible glass and polyimide substrates. Metals are selectively plated onto the UV-laser activated portions of the resist. This relatively simple approach, developed by Nano3D Systems, obviates the need for physical vapor deposition, photolithography, and lift-off techniques that are normally used for fabrication of circuitry on flexible substrates.