In recent years, further improvements in the efficiency of Cu2ZnSn(S,Se)4 photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu2SnS3 is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu2SnS3 displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu2SnS3 thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu2SnS3. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu2SnS3 displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu2SnS3-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.
Over the past few years a study was focused on the development of bond graphs for thermofluid processes and systems using the true power variables of temperature and time rate of change of entropy. This paper summarizes results of the study. Discussion begins with the study of a simple case of single phase incompressible fluid flow and ends with a completely general case of multiphase, variable density flow. Variations in density require introduction of the momentum equation to the bond graph. Inclusion of entropy as a state variable necessitates the use of Gibb’s equation and its representation by means of bond graphs. This paper presents these formulations and representations, and compares dynamic results predicted by bond graphs with those of classical approaches.
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