New anthracene-based polyethers, anthracene/bisphenol A (An-BPA) and anthracene/fluorinated bisphenol A (An-BPAF), were synthesized and characterized. An-BPA and An-BPAF were fully soluble in common organic solvents and had number-average molecular weights of 2580 and 3240, respectively. The optical properties of the polymers were investigated with ultraviolet-visible absorption and photoluminescence spectroscopy. Blue photoluminescence was observed in dilute solutions. In solid thin films, p-p interactions influenced the optical properties, and redshifted photoluminescence spectra were obtained; a green emission (504 nm) for An-BPAF and a green-yellow emission (563 nm) for An-BPA were found. By cyclic voltammetry, the electrochemical band gap was estimated to be 2.72 and 3.05 eV for An-BPA and An-BPAF, respectively. Single-layer diode devices of an indium tin oxide/polyether/aluminum configuration were fabricated and showed relatively low turn-on voltages (3.5 V for An-BPA and 3.7 V for An-BPAF).
New conjugated polymers based on separated PPV-type chromophores and incorporating different types of solubilizing side-groups (ethoxy: P1, hexyloxy: P2, dodecyloxy: P3 and benzyloxy: P4) were synthesized via Wittig polycondensation, using a series of bisphenol A-derived di(triphenylphosphonium) salts as starting monomers. The polymers are soluble in common organic solvents and their structures were confirmed by 1 H NMR, 13 C NMR and FTIR spectroscopies. The optical properties of these materials were investigated by UV-vis absorption and fluorescence spectroscopies. In dilute solution, quasi-identical fluorescence spectra were obtained and all the polymers showed a blue emission (420, 445 nm) and a narrow spectrum. In thin solid films, the polymers show side-group-dependent optical behavior and, whereas the emission remains blue in the case of P2, P3 and P4, a green fluo-rescence was observed for the ethoxylated polymer P1. From cyclic voltammetry analysis, the electrochemical band gaps were estimated to be 2.99, 3.07, 3.15 and 3.06 eV for P1, P2, P3 and P4, respectively. Single-layer diode devices of the [indium tin oxide/polymer/alumi-num] configuration have been fabricated and show relatively low turn-on voltages between 2.6 and 4.9 V.
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