Highly (101)-oriented p-Ag 2 O thin film with high electrical resistivity was grown by rapid thermal oxidation (RTO) on clean monocrystalline p-type Si without any post-deposition annealing. From optical transmittance and absorptance data, the direct optical band gap was found to be 1.46 eV. The electrical and photovoltaic properties of Ag 2 O/Si isotype heterojunction were examined in the absence of any buffer layer. Ideality factor of heterojunction was found to be 3.9. Photoresponce result revealed that there are two peaks located at 750 nm and 900 nm.

Conductive transparent In 2 O 3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200 • C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grown In 2 O 3 films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm 2 · V −1 · s −1 . These results are compared with those of In 2 O 3 films prepared by other methods.