Copper Sulfide (CuS) thin films were deposited onto a glass substrate using the Chemical Bath Deposition (CBD) technique. The chemical bath Precursors were made up of CuSO4, SC(NH2)2, and C4H6O6. Different parameters have been considered to specify the optimum conditions for fabricating CuS thin films, such as solution temperature, deposition time, pH level, and different precursor concentrations. It has been found that the optimum deposition time is 20 min at temperature 80 °C and pH = 11. The optimum precursor concentrations were 0.15 M, 0.2 M, and 0.1 M of CuSO4, SC(NH2)2, and C4H6O6, respectively. The structural properties of the thin film were studied using X-ray diffraction (XRD), and a single peak was observed for the thin film made at optimum conditions, while all other cases were amorphous. It is obvious from the optical characterization that the transmission spectra show a red-shift for the cases of increasing deposition time, bath temperature, C4H6O6 concentration, and pH. For the case of increasing CuSO4, blue shifts in the transmission spectra were observed. The energy band gap, resistivity, and activation energy of CuS thin films under optimum conditions are 2.35 eV, 0.7 Ω·cm, and 0.0152 eV, respectively.