In this work, the numerical simulation of CH3NH3PbI3 perovskite solar cells was undertaken using the scaps-1d solar cell capacitance simulator software. A perovskite solar cell was simulated for best efficiency by replacing the traditional compact TiO2 layer with CdS (i.e., a hole-blocking layer) because CdS layers have been shown to possess a greater photostability than TiO2 with continuous illumination of sunlight. With the view of optimizing the device fabrication of perovskite/CdS thin-film solar cell (TFSC) for maximum efficiency, the perovskite/CdS TFSC structure was optimized theoretically using scaps-1d, which is possible because the perovskite layer has the same configuration and an excitation type as CdTe, copper-indium-gallium-selenide, and other inorganic semiconductor solar cells. Solar cell performance is highly dependent on the layer parameters, and so the effect that absorber thickness, bulk defects, and interface defects have on the device performance was studied and the device was optimized. Further, the effect that atmospheric conditions have on device performance was studied by varying the temperature and illumination density, and the optimum performance was found. After these optimizations, the simulation results show that a perovskite thickness of 500 nm yields an efficiency of 23.83% with a high open-circuit voltage of 1.37 V. These results for this absorber thickness is in good agreement with reports of experimental results for this device.

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Organometal halide perovskite (CH 3 NH 3 PbI 3 ) absorber was synthesized from CH 3 NH 3 I and PbI 2 in N, N dimethylformamide by solution spin coating process. Characterization by X-ray diffraction, optical and electron microscopy studies confirmed a wellformed nano-crystalline tetragonal pervoskite structure. The synthesized CH 3 NH 3 PbI 3 was used as a photo absorber material in a hole-conductor free photovoltaic device with TiO 2 as an electron conductor. This configuration of the perovskite photovoltaic device exploits the role of CH 3 NH 3 PbI 3 simultaneously as light absorber and hole-conducting material. We report two device configurations: (a) with a compact TiO 2 buffer layer introduced between the porous TiO 2 and FTO and (b) without the compact TiO 2 layer over the FTO substrate. The simple solar cell structure FTO/TiO 2 /CH 3 NH 3 PbI 3 /Agpresented here shows good photovoltaic performance under illumination with standard AM1.5 sunlight. For the champion devices from the two structures, (a) and (b), we obtained short circuit photocurrent densities asJ sc = 17.4 mA/cm 2 and 19.5 mA/cm 2 , open circuit voltage V oc = 1.0 V and 1.45 V, fill factor FF = 0.54 and 0.29 and a power conversion efficiency (PCE) of 9.39% and 8.19% respectively under solar light intensity flux of 100 mW/cm 2 . We find that structure (a) offers significantly better device parameters. The results of the present work suggest a route to realize a simple, low cost and highly efficient perovskite photovoltaic device. These devices could be realized in miniaturized sensors and electronic components applied in Internet of Things (IoT). Flexible and miniaturization of electronic devices has led the fast expansion of the personal information, point-of-care detection of diseases through a boom in the IoT. The search for clean and renewable alternative sources of energy to the existing power production methods is enormously important to protect the global environment and assuring continuous economic growth.1 Our environment provides many possible energy resources that can conveniently be harvested to power electronic applications. Solar energy is undoubtedly one of the most abundant renewable energy resource with no environmental risks. Hybrid organic-inorganic perovskites (HOPs) with general formula ABX 3 (where A is a cation, B is divalent metal ion and X is halide) are a class of semiconductor materials with potential to deliver low cost and more efficient solar cells than the existing siliconbased technology. These materials exhibit remarkable and diverse opto-electronic properties including higher absorption coefficient (10 4 cm −1 at 550 nm), 2 longer diffusion lengths (over one micron) both for holes and electrons, 3,4 ambipolar charge transport and the most important property of bandgap tunability with the halide content. 5,6 To date HOPs have been applied in various fields including photovoltaics, light emitting diodes, solar to fuel energy conversion devices etc. However, the current photonics based technological advancements ...

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