This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.
In this work, a comprehensive technology computer aided design-based investigation of a buffer-free high electron mobility transistor under proton radiation is presented. With a 37.55% thinner architecture (without thick and highly doped Fe buffer) grown on silicon carbide substrate, this device design improves the two-dimensional electron gas (2DEG) confinement and helps to eliminate the various dispersion effects and buffer leakage. To gain better insight into the buffer-free device architecture, direct current (DC), thermal, and radio frequency (RF) studies are carried out. To establish the various prospects of this device in high-power and space applications, the performance of the device under 1.8 MeV proton radiation environment is systematically studied. A comparison demonstrates that the buffer-free structure under proton radiation with fluence
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degradation of 18.68% compared with 72.7% in the case of conventional architecture. The excellent capability of the buffer-free device to confine 2DEG more precisely even under radiation environments can be concluded from the various DC and RF parameters studied. An extensive study of the effects of proton fluences and biases on the RF power amplifier figures of merit was also conducted by carrying out harmonic balance simulations for different radiation setups, which demonstrates excellent performance of the buffer-free structure.
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