No abstract

A device used for superhigh-speed communications on the terahertz band is required. However, high-speed-response devices fabricated using Si-based technology cannot achieve this frequency. Field emitters have exhibited a high-speed response at frequencies higher than 100 GHz utilizing electron emission in a vacuum. Therefore, field emission devices are very suitable for use as high-speed switching elements. We have fabricated a local vacuum package enclosing a Si field emitter array and a Ti getter on a Si substrate using Si integrated circuit (IC) technology and micro-electro-mechanical system (MEMS) technology for an on-chip integrated device. In this paper, we discuss the Ti getter. The bridge structure getter was successfully evaporated within the cavity structure. This technique can realize micrometer-order alignment, and will be very useful for many applications owing to its high performance.

Field emitters have high-speed response characteristics at over 100GHz because they utilize electron emission in a vacuum. Therefore, field emission devices are very suitable for use as high-speed switching elements. Practical field emitters can be fabricated by using the Si process. Consequently, the authors have fabricated a local vacuum package on a Si substrate that is adapted to the integrated circuit process for on-chip integrated devices. The technique was then used to fabricate Si field emitter arrays with integrated circuits on Si substrates. This has the great advantage that devices can be aligned on a micrometer size. This technique is very useful for many applications involving high performance on-chip integrated devices.