Direct writing of single-mode waveguides into crystalline silicon using ps laser pulses is presented. The embedded structures were fabricated by moving the focal position along the beam axis with the help of a long distance microscope objective. In situ monitoring during inscription was performed to analyze the processing dynamics. The waveguide generation is based on pronounced multi-pulse interaction at moderate pulse energies around 100 nJ. All samples were characterized in terms of mode field distribution and damping losses. Calculations indicate an induced refractive index change in the range of 10 to 10. Moreover, a Y-splitter was realized to demonstrate the potential of this process.

Ultrashort laser pulses allow for the in-volume processing of glass through non-linear absorption, resulting in permanent material changes and the generation of internal stress. Across the manifold potential applications of this technology, process optimization requires a detailed understanding of the laser-matter interaction. Of particular relevance are the deposition of energy inside the material and the subsequent relaxation processes. In this paper, we investigate the spatio-temporal evolution of free carriers, energy transfer, and the resulting permanent modifications in the volume of glass during and after exposure to femtosecond and picosecond pulses. For this purpose, we employ time-resolved microscopy in order to obtain shadowgraphic and interferometric images that allow relating the transient distributions to the refractive index change profile. Whereas the plasma generation time is given by the pulse duration, the thermal dynamics occur over several microseconds. Among the most notable features is the emergence of a pressure wave due to the sudden increase of temperature and pressure within the interaction volume. We show how the structure of the modifications, including material disruptions as well as local defects, can be directly influenced by a judicious choice of pulse duration, pulse energy, and focus geometry.

The origin of waveguiding in the bulk of silicon after sub‐ps laser inscription is investigated. Locally resolved Raman measurements of waveguide cross sections and along the propagation axis reveal highly localized crystal deformations. These modifications consist of highly confined regions of silicon with a disturbed crystal structure accompanied with strain. This transformation is responsible for a local increase of the refractive index allowing localized waveguiding. On the basis of near‐field measurements at an excitation wavelength of 1550 nm, the absolute value of the refractive index change is estimated to be in the range of 10−3.

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