Silicon nitride (SiN x) thin films have attracted interest as an important material for use in next-generation devices such as a gate spacer in 3D fin field-effect transistors (finFETs), charge trap layers, etc. Many studies using the SiN x plasma enhanced atomic layer deposition (PEALD) method have been conducted, owing to its advantages over other SiN x deposition methods. In this review, the recent studies on PEALD of SiN x thin films are summarized, and the effects of some process parameters including plasma power, frequency, and process temperature on the material properties of SiN x are discussed. In addition, some properties of SiN x thin films such as conformality, wet etch rate, and others are reviewed.