When two planar atomic membranes are placed within the van der Waals distance, the charge and heat transport across the interface are coupled by the rules of momentum conservation and structural commensurability, lead to outstanding thermoelectric properties. Here we show that an effective 'inter-layer phonon drag' determines the Seebeck coefficient (S) across the van der Waals gap formed in twisted bilayer graphene (tBLG). The cross-plane thermovoltage which is nonmonotonic in both temperature and density, is generated through scattering of electrons by the out-of-plane layer breathing (ZO /ZA2) phonon modes and differs dramatically from the expected LandauerButtiker formalism in conventional tunnel junctions. The Tunability of cross-plane seebeck effect in van der Waals junctions may be valuable in creating a new genre of versatile thermoelectric systems with layered solidsIn spite of subnanometer separation of the van der Waals gap (∼ 0.5 nm), the coupling of the two graphene layers in twisted bilayer graphene (tBLG) varies strongly with temperature (T ), and the twist or misorientation angle θ between the hexagonal lattices of participating graphene layers [1][2][3][4][5][6][7][8][9]. At T Θ BG , where Θ BG is the Bloch-Grüneisen temperature, the layers are coherently coupled either for θ 10• with a renormalized Fermi velocity [4,8], or at specific values of θ, such as θ = 30• ± 8.21• , when the hexagonal crystal structures become commensurate [1]. For θ > 10• (and away from the 'magic' angles), the layers are essentially decoupled at low T , but get effectively re-coupled at higher T (> Θ BG ), when the interlayer phonons drive cross-plane electrical transport through strong electron-phonon scattering [2,3]. These phonons are also expected to determine thermal and thermoelectric transport across the interface [10][11][12][13][14][15]. In fact, since the in-plane transverse and longitudinal phonons are effectively filtered out from contributing to cross-plane transport because they do not substantially alter the tunneling matrix elements, theoretical calculations predict enhanced cross-plane thermoelectric properties in van der Waals heterojunctions, including high ZT factors at room temperature [12]. However, although the impact of interlayer coherence and electron-phonon interaction on electrical conductance has been studied in detail [1,3], their relevance to the thermal and thermoelectric properties of tBLG remains unexplored.We assembled the tBLG devices with layer-by-layer mechanical transfer method, which is common in van der Waals epitaxy [16][17][18]. Three devices were constructed which show very similar behavior, and we present the results from one of the devices here. The device consists of two graphene layers oriented in a "cross" configuration (inset of Fig. 1a and an optical micrograph in Fig. 1b), and entirely encapsulated within two layers of hexagonal boron nitride (hBN). The carrier mobilities in the upper and lower layers are ≈ 25000 cm 2 V −1 s −1 and ≈ 60000 cm 2 V −1 s −1 , at room tem...

Using a recently proposed Ginzburg-Landau-like lattice free energy functional due to Banerjee et al. Phys. Rev. B 83, 024510 (2011) we calculate the fluctuation diamagnetism of high-Tc superconductors as a function of doping, magnetic field and temperature. We analyse the pairing fluctuations above the superconducting transition temperature in the cuprates, ranging from the strong phase fluctuation dominated underdoped limit to the more conventional amplitude fluctuation dominated overdoped regime. We show that a model where the pairing scale increases and the superfluid density decreases with underdoping produces features of the observed magnetization in the pseudogap region, in good qualitative and reasonable quantitative agreement with the experimental data. In particular, we explicitly show that even when the pseudogap has a pairing origin the magnetization actually tracks the superconducting dome instead of the pseudogap temperature, as seen in experiment. We discuss the doping dependence of the 'onset' temperature for fluctuation diamagnetism and comment on the role of vortex core-energy in our model.

We study the Nernst effect in fluctuating superconductors by calculating the transport coefficient xy a in a phenomenological model where the relative importance of phase and amplitude fluctuations of the order parameter is tuned continuously to smoothly evolve from an effective XY model to the more conventional Ginzburg-Landau description. To connect with a concrete experimental realization we choose the model parameters appropriate for cuprate superconductors and calculate xy a and the magnetization M over the entire range of experimentally accessible values of field, temperature and doping. We argue that xy a and M are both determined by the equilibrium properties of the superconducting fluctuations (and not their dynamics) despite the former being a transport quantity. Thus, the experimentally observed correlation between the Nernst signal and the magnetization arises primarily from the correlation between xy a and M. Further, there exists a dimensionless ratio T M xy a ( ) that quantifies this correlation. We calculate, for the first time, this ratio over the entire phase diagram of the cuprates and find it agrees with previous results obtained in specific parts of the phase diagram. We conclude that there appears to be no sharp distinction between the regimes dominated by phase fluctuations and Gaussian fluctuations for this ratio in contrast to xy a and M individually. The utility of this ratio is that it can be used to determine the extent to which superconducting fluctuations contribute to the Nernst effect in different parts of the phase diagram given the measured values of magnetization. J r J r J r J r J r J r , 4 S S S S J J r J r J J r J r

A Datta-Das spin field effect transistor is built of a one-dimensional weak link, with Rashba spin orbit interactions (SOI), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated to lowest order in the tunneling through the weak link and in the wide-band approximation, with emphasis on their dependence on the origins of the 'bare' magnetizations in the reservoirs. The SOI is found to generate magnetization components in each reservoir, which rotate in the plane of the electric field (generating the SOI) and the weak link, only if the 'bare' magnetization of the other reservoir has a non-zero component in that plane. The SOI affects the charge current only if both reservoirs are polarized. The charge current is conserved, but the transverse rotating magnetization current is not conserved since the SOI in the weak link generates extra spin polarizations which are injected into the reservoirs. arXiv:1901.07554v1 [cond-mat.mes-hall]

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