Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments described in this paper demonstrate that the desorption of hydrocarbon contamination at the silicon wafer surfaces appears to be a necessary condition for the formation of these bubbles. SIMS data also indicate the existence of hydrocarbons at the bonding interface. It is speculated that hydrocarbon gas such as CH4 is required for bubble nucleation and that either CH4 or H2 itself or a mixture of both gases is contained in these bubbles. Finally, methods to prevent the formation of these bubbles are presented.

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A technology is presented that will allow the fabrication of thin III-V compound semiconductor layers of low dislocation density on silicon substrates. GaAs and InP wafers were successfully bonded to bare and oxidized silicon substrates in an experimental setup that produces a microcleanroom for bubble-free bonding in any environment. The bonding strength was found to be comparable to that of Si on oxidized Si and sufficient to subsequent grinding and polishing of the bonded wafers.

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A mixture of isophthalic acid (IPA) and terephthalic acid (TPA) was activated by a tosyl chloride/dimethylformamide/pyridine (Py) condensing agent in two steps via the treatment of a mixture of the initially activated IPA/TPA with additional TPA followed by the activation of TPA with the agent. The resulting mixture showed a solubility in Py different from that obtained by the activation of them all at once; the difference might be due to different structures of the aggregates of the activated IPA and TPA at the same composition of the diacids. The structures of the aggregates were evaluated on the basis of melting points and the IR spectra of a mixture of dimethyl esters of IPA and TPA produced by the quenching of the reaction mixtures with methanol. The mixture obtained by two-step activation showed lower melting points and spectral changes due to enhanced associations of the esters with respect to the mixture prepared by the activation of them all at once. The aggregates were also examined in terms of the distributions of IPA and TPA in thermotropic copolyesters prepared from methylhydroquinone and chlorohydroquinone by their transition temperatures and 13 C NMR.