Low-temperature-deposited silicon nitride and aluminum oxide films are investigated for reducing carrier recombination at the silicon surface. The insulator/silicon interface properties (fixed charge density, fast interface state density, and surface recombination velocity) are studied as a function of deposition and annealing temperature in the range of 270 ~ 550~ The effects of UV irradiation and their elimination by charge-induced passivation are extensively discussed. The successful application of both films for front surface passivation of a novel thin-silicon solar cell of the back collection type (BACK-MIS cell) is demonstrated. Finally, a simple configuration for efficient back surface passivation of solar cells is introduced as a possible substitute for the conventional back surface field.The achievement of high efficiencies for crystalline silicon solar cells is highly dependent on the reduction of carrier recombination at the surface (1, 2). Two different techniques are presently applied to obtain low effective surface recombination velocities; (i) growth of a thermal oxide film to reduce surface state density, and (ii) creation

Bone marrow biopsies of 674 patients with multiple myeloma (MM) were processed for diagnostic evaluation. Histologic variables were correlated with the clinical features to determine factors of value in predicting prognosis. Four of these were used to classify MM into six histologic types: Marschalko type; small cell type; cleaved type; polymorphous type; asynchronous type; and blastic type. These six types were subsequently combined into three prognostic grades: low, intermediate, and high, analogous to the malignant lymphomas. The quantity of plasma cell burden in the biopsy proved to be a useful criterion for histologic staging of MM, supplementing any clinical staging system in use. Both these parameters, grade and stage, provide information required for decisions on treatment modalities, while the effects of therapy can be monitored by sequential biopsies.

Abstract. The FORS Deep Field project is a multi-colour, multi-object spectroscopic investigation of a ∼7 × 7 region near the south galactic pole based mostly on observations carried out with the FORS instruments attached to the VLT telescopes. It includes the QSO Q 0103-260 (z = 3.36). The goal of this study is to improve our understanding of the formation and evolution of galaxies in the young Universe. In this paper the field selection, the photometric observations, and the data reduction are described. The source detection and photometry of objects in the FORS Deep Field is discussed in detail. A combined B and I selected UBgRI JK s photometric catalog of 8753 objects in the FDF is presented and its properties are briefly discussed. The formal 50% completeness limits for point sources, derived from the co-added images, are 25.64, 27.69, 26.86, 26.68, 26.37, 23.60 and 21.57 in U, B, g, R, I, J and Ks (Vega-system), respectively. A comparison of the number counts in the FORS Deep Field to those derived in other deep field surveys shows very good agreement.

During these periods Dr. Jaeger was engaged in laboratory research in neutrino and meson interaction physics, bubble chamber experiments, particle beam designs and superconducting magnet technology. In addition to high energy physics his experience includes electronics, computer science and cryogenics. In January 1982 Dr. Jaeger joined Lockheed Missiles and Space Company, Sunnyvale California as a research specialist responsible for upgrading all primary measurement standards required by the organization. Since October 1983 he has been the supervisor responsible for primary electrical measurement standards. Dr. Jaeger resides in Saratoga, California. Richard S. Davis Dr. Richard Davis was educated at Brown University (B.S., Physics, 1967) and the University of Maryland (Ph.D., Solid State Physics, 1972). His fields of study include experimental solid state physics, theoretical and experimental problems in fluid dynamics, properties of materials at very low temperatures, superfluid properties of liquid helium, electronics, absolute electrical measurements and basic mass metrology. Dr. Davis joined the National Bureau of Standards in 1972. His laboratory research programs at NBS have been concerned with the improvement of the measured value of the Faraday (the fundamental constant of electrochemistry), high voltage capacitor calibrations, the accurate determination of air density effects in mass measurements and improved methods for mass comparison at the highest levels of accuracy. Dr. Davis resides in Washington, D.C.

Photon management is one of the key issues for improving the performance of thin-film silicon solar cells. An important part of the photon management is light trapping that helps to confine photons inside the thin absorber layers. At present light trapping is accomplished by the employment of the refractive-index matching layers at the front side and the high-reflective layers at the back contact of the solar cells and scattering of light at randomly surface-textured interfaces. In this article key issues and potential of light management in thin-film silicon solar cells are addressed. Novel approaches for light trapping are presented such as i) surface textures based on periodic diffraction gratings and modulated surface morphologies for enhanced scattering and anti-reflection, ii) metal nano-particles introducing plasmonic scattering, and iii) one-dimensional photonic-crystal-like structures for back reflectors.