No abstract

A layer thickness and stress-dependent correction for InGaAs low-field mobility in technology computer-aided design applications is presented. This correction is based on a simplified phonon-limited mobility, which accounts for the geometrical quantization and stress effects. The stress effect is modeled with a linear deformation potential model for the valley energy change and a stress-related change of the effective mass and nonparabolicity of valley. The model shows good agreement with known literature data for the dependence of the In 0.53 Ga 0.47 As mobility in double-gate structures on the layer thickness. Simulation results for the stress dependence of the mobility in In 1−x Ga x As devices are also presented.Index Terms-III-V semiconductors, InGaAs, mobility, modified local density approximation (MLDA), MOSFET, quantum correction, technology computer-aided design (TCAD).

This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion (DD) transport approach, which can account for the ballistic effect in shortchannel devices. The KVM considers a thermionic emission limit and a free carrier acceleration limit for the mobility. We develop a methodology to extract the parameters for the KVM and for the high-field saturation velocity model for SiGe nanowires over the whole mole fraction range. The calibrated DD simulations with KVM show good agreement with Boltzmann transport equation results in terms of on-state current and carrier-weighted velocity distribution over a wide range of gate lengths for both linear and saturation regimes.