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Al x Ga1-x N(0001) films with flat surfaces in the composition range of x=0.1-0.4 are successfully grown directly on Si(111) using two-flow-channel metalorganic vapor phase epitaxy (MOVPE). Reflection high-energy electron diffraction (RHEED) patterns are spotty for growth temperatures between 1000°C and 1150°C, indicating that the Al x Ga1-x N film is a single crystal. In addition, good control of the AlN mole fraction (0.1 to 0.4) is achieved by changing the gas ratio of the group III gas sources.