We have extended our previous study of the diffusion of acid from chemically amplified (CA) resist layer to Si-hardmask (Si-HM) layer using an ArF eximer laser as a light source. The acid concentration in the resist layer was estimated based on the de-protection reaction kinetics for the CA resist using in-situ FT-IR spectroscopy. Acid diffusion at CA resist/Si-HM interface essentially occurred regardless of the light wavelength on irradiation. The acid diffusion and resist sensitivity were discussed in terms of the structures of Si-HM on irradiation at 193 nm.
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