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Herein, tunneling aluminum oxide (Al2O3) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al2O3 films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110–115 Ω □−1) hydrophilic surfaces operating as metal–insulator–semiconductor (MIS) contacts. The emitter saturation current density values of ≈57 fA cm−2 are achieved for the Al2O3 film thicknesses of 2 nm before metallization. At this same thickness, the contact resistivity values of 33 mΩ cm2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al2O3 used to create these MIS structures are all performed with industrially relevant equipment on Cz wafers.

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