The nucleation mechanism of aluminum nitride films grown by the method ofhydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) istheoretically analyzed. The temperature regions and vapor pressure regionsof components are determined in which the island growth mechanism and thelayer-by-layer growth mechanism are realized. The theoretical conclusionsare compared with the experimental data. The morphology of aluminum nitridefilm on 3C-SiC/Si(111) at the initial growth stage is investigated by themethod of scanning electron microscopy. The methods of controlling thechange of the growth mechanism from the island growth to the layer-by-layergrowth are proposed. Keywords: aluminium nitride, gallium nitride, silicon carbide on silicon, method HVPE, nucleation, wide-bandgap semiconductors, heterostructures.\

The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires. Keywords: III-V nanowires, vapor-liquid-solid growth mechanism, nucleation